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RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
HFM101 THRU HFM108
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FEATURES
* * * * * * Glass passivated device Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.057 gram
DO-214AC
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
0.067 (1.70) 0.051 (1.29) 0.180(4.57) 0.160(4.06) 0.110 (2.79) 0.086 (2.18)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
0.091 (2.31) 0.067 (1.70) 0.059 (1.50) 0.035 (0.89) 0.209 (5.31) 0.185 (4.70)
0.012 (0.305) 0.006 (0.152)
0.008 (0.203) 0.004 (0.102)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Volts Maximum DC Blocking Voltage Maximum Average Forward Current at TA = 50oC Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 2) Pulse energy, non repetitive(inductive load switch off ) Operating and Storage Temperature Range SYMBOL VRRM VRMS VDC IO IFSM CJ ER TJ, TSTG 15 20 -65 to + 150 HFM101 HFM102 HFM103 HFM104 HFM105 HFM106 HFM107 HFM108 50 35 50 100 70 100 200 140 200 300 210 300 400 280 400 1.0 30 12 600 420 600 800 560 800 1000 700 1000 UNITS Volts Volts Volts Amps Amps pF mJ
0
C
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Maximum Full Load Reverse Current, Full cycle Average TA = 55oC Maximum DC Reverse Current at @TA = 25oC Rated DC Blocking Voltage @TA = 125oC Maximum Reverse Recovery Time (Note 1) NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A. 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts. SYMBOL VF IR trr 50 HFM101 HFM102 HFM103 HFM104 HFM105 HFM106 HFM107 HFM108 1.0 1.3 50 5.0 100 75 1.7 UNITS Volts uAmps uAmps uAmps nSec 2002-2
RATING AND CHARACTERISTIC CURVES ( HFM101 THRU HFM108 )
AVERAGE FORWARD CURENT, (A)
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50 NONINDUCTIVE 10 NONINDUCTIVE
trr +0.5A
(-)
FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE
2.0
Single Phase Half Wave 60Hz Resistive or Inductive Load
(+) 25 Vdc (approx) (-)
D.U.T
0
PULSE
GENERATOR
-0.25A
(NOTE 2) 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) (+)
1.0
-1.0A
NOTES:1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF. 2. Rise Time = 10ns max. Souce Impedance = 50 ohms.
1cm
SET TIME BASE FOR 10/20 ns/cm
0 0 25 50 75 100 125 150175
AMBIENT TEMPERATURE (
)
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT, (uA) INSTANTANEOUS FORWARD CURRENT, (A)
100
10
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
5
03 M1
~H
HF
04
01~
M1
1.0
.1
TJ = 25
HF
HF
TJ = 100
M1
.1
.01
Pulse Width = 300uS 1% Duty Cycle
.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
PEAK FORWARD SURGE CURRENT, (A)
.001 0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 INSTANTANEOUS FORWARD VOLTAGE, (V) FIG. 6 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, (pF)
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 70 60 50 40 30 20 10 0 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz 100
8.3ms Single Half Sine-Wave (JEDEC Method)
200 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 REVERSE VOLTAGE, ( V ) 100
HFM 101 ~HF M10 5
TJ = 25
HF
TJ = 25
HFM
M
10
106
6~
10
HF
1.0
FM
TJ = 150
~HF
M 10
10
8
M1
08
RECTRON

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